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Advanced Technical Information
MITB10WB1200TMH
18
4.8
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Ic = 10A
Vce = 600V
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Eon
Eoff
Erec
Vce = 600V
Vge = +/-15V
Rg = 100 W
Tvj = 125°C
0
5
10 15 20 25 30
35 40 45 50 55 60 65 70
0
2
4
6
8
10
12
14
16
18
20
22
Qg [nC]
Typical turn on gate charge
Ic, If [A]
Typical switching energy versus collector current
2.2
2
Eon
Eoff
13
12.8
Irr
trr
If = 10A
Vce = 600V
Vge = +/-15V
500
480
1.8
Erec
12.6
Tvj = 125°C
100 W
460
1.6
12.4
440
1.4
12.2
220 W
150 W
420
1.2
1
0.8
12
11.8
150 W
400
380
0.6
0.4
0.2
Ic, If = 10A
Vce = 600V
Vge = +/-15V
Tvj = 125°C
11.6
11.4
11.2
220 W
100 W
360
340
320
0
11
300
100
120
140
160
180
200
220
200
220
240
260
280
300
320
Rg [ W ]
Typical switching energy versus gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
dif/dt [A/μs]
Typical turn-off characteristics of free wheeling diode
20100906b
7-8
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